Datasheet Details
| Part number | BFP540FESD |
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| Manufacturer | Infineon |
| File Size | 176.43 KB |
| Description | Low profile robust silicon NPN RF bipolar transistor |
| Datasheet |
 BFP540FESD Datasheet
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| Part number | BFP540FESD |
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| Manufacturer | Infineon |
| File Size | 176.43 KB |
| Description | Low profile robust silicon NPN RF bipolar transistor |
| Datasheet |
BFP540FESD Datasheet
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The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family.
Its high gain and ESD structure make the device suitable for applications that requires highly robustness and high performance.
It remains cost competitive without compromising on ease of use.
BFP540FESD Low profile robust silicon NPN RF bipolar transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BFP540F | NPN Silicon RF Transistor | Infineon Technologies AG |
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BFP540 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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BFP540ESD | Low Noise Silicon Bipolar RF Transistor | Infineon |
| Part Number | Description |
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