BFP540FESD transistor equivalent, low profile robust silicon npn rf bipolar transistor.
that requires highly robustness and high performance. It remains cost competitive without compromising on ease of use.
.
The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its high gain and ESD structure make the device suitable for applications that requires h.
Image gallery
Download